? 2004 ixys all rights reserved 1 - 4 407 ixlf 19n250a ixys reserves the right to change limits, test conditions and dimensions. high voltage igbt in high voltage isoplus i4-pac tm features ? high voltage igbt - substitute for high voltage mosfets with significantly lower voltage drop and comparable switching speed - substitute for high voltage thyristors with voltage control of turn on & turn off - substitute for electromechanical trigger and discharge relays isoplus i4-pac tm high voltage package - isolated back surface - enlarged creepage towards heatsink - enlarged creepage between high voltage pins - application friendly pinout - high reliability - industry standard outline - ul registered e 72873 applications switched mode power supplies dc-dc converters resonant converters laser generators, x ray generators discharge circuits i c25 = 32 a v ces = 2500 v v ce(sat) = 3.2 v t f = 250 ns 5 1 2 1 5 2 igbt symbol conditions maximum ratings v ces t vj = 25c to 150c 2500 v v ges 20 v i c25 t c = 25c 32 a i c90 t c = 90c 19 a i cm v ge = 15 v; r g = 47 ? ; t vj = 125c 70 a v cek rbsoa, clamped inductive load; l = 100 h 1200 v p tot t c = 25c 250 w symbol conditions characteristic values (t vj = 25 c, unless otherwise specified) min. typ. max. v ce(sat) i c = 19 a; v ge = 15 v; t vj = 25c 3.2 3.9 v t vj = 125c 4.7 v v ge(th) i c = 1 ma; v ge = v ce 58v i ces v ce = v ces ; v ge = 0 v; t vj = 25c 0.15 ma t vj = 125c 0.2 ma i ges v ce = 0 v; v ge = 20 v 500 na t d(on) 100 ns t r 50 ns t d(off) 600 ns t f 250 ns e on 15 mj e off 30 mj c ies 2.28 nf c oes v ce = 25 v; v ge = 0 v; f = 1 mhz 103 pf c res 43 pf q gon v ce = 1500v; v ge = 15 v; i c = 19 a 142 nc r thjc 0.5 k/w inductive load, t vj = 125c v ce = 1500 v; i c = 19 a v ge = 15 v; r g = 47 ?
? 2004 ixys all rights reserved 2 - 4 ixlf 19n250a 407 dimensions in mm (1 mm = 0.0394") component symbol conditions maximum ratings t vj -55...+150 c t stg -55...+125 c v isol i isol 1 ma; 50/60 hz 2500 v~ f c mounting force w ith clip 20...120 n symbol conditions characteristic values min. typ. max. d s ,d a c pin - e pin 7.0 mm d s ,d a pin - backside metal 5.5 mm r thch with heatsink compound 0.15 k/w weight 9g
? 2004 ixys all rights reserved 3 - 4 407 ixlf 19n250a 0 10203040 10 100 1000 10000 0123456 0 20 40 60 80 012345 0 10 20 30 40 50 13 v 11 v t j = 125c 15 v 6 7 8 9 10 11 12 13 14 15 0 10 20 30 40 50 60 70 80 13 v 15 v 9 v 9 v v ce v a i c v ce a i c v v v v ge v ce i c pf capacitance t j = 25c v ge = 17 v 11 v a v ge = 17 v v ce = 20 v t j = 125c t j = 25c c oes c ies c res 0 50 100 150 0 5 10 15 20 nc q g v v ge v ce = 1500 v i c = 19 a t j = 25c 0 400 800 1200 1600 2000 2400 0 20 40 60 80 v ce i cm v a r g = 47 ? t j = 125c v cek < v ces f = 1 mhz fig. 1 typ. output characteristics fig. 2 typ. output characteristics fig. 3 typ. transfer characteristics fig. 4 capacitance curves fig. 5 typ. gate charge characteristics fig. 6 reverse biased safe operating area rbsoa
? 2004 ixys all rights reserved 4 - 4 ixlf 19n250a 407 0 10203040 0 10 20 30 40 50 0 40 80 120 160 200 0 10203040 0 10 20 30 40 50 60 0 200 400 600 800 1000 1200 0 50 100 150 200 250 0 10 20 30 40 0 500 1000 1500 2000 0 50 100 150 200 250 0 5 10 15 20 25 30 35 0 50 100 150 200 250 300 350 e on t d(on) t r e off t d(off) t f e on t d(on) t r e off t d(off) t f i c a i c a e off e on t t r g ? r g ? mj e on mj e off ns t ns t mj ns ns mj v ce = 1500 v v ge = 15 v r g = 47 ? t j = 125c v ce = 1500 v v ge = 15 v r g = 47 ? t j = 125c 0.001 0.01 0.1 1 10 0.01 0.1 1 t s k/w z thjc single pulse IXLF19N250A v ce = 1500 v v ge = 15 v i c = 19 a t j = 125c v ce = 1500 v v ge = 15 v i c = 19 a t j = 125c fig. 7 typ. turn on energy and switching fig. 8 typ. turn off energy and switching times versus collector current times versus collector current fig. 11 typ. transient thermal impedance fig. 9 typ. turn on energy and switching fig. 10 typ. turn off energy and switching times versus gate resistor times versus gate resistor
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